Vision PE (Plasma Etch mode)

In addition to the Vision RIE system, Advanced Vacuum offers the Vision PE for applications that require low density plasma with little or no ion bombardment. The Vision PE differs from the Vision RIE parallel-plate capacitance plasma by only applying power to the upper electrode. In PE mode, ions are not biased towards the substrate with the result being a more chemically influenced isotropic etching condition.  This is particularly useful for etching when material selectivity is chemically driven such as for failure analysis studies.

As with the Vision RIE, the Vision PE is used in R&D, prototyping and low volume production environments for fundamental material studies and surface modification, semiconductor device fabrication, and failure analysis involving delayering.

For additional flexibility, the Vision PE can be used with the lower electrode powered (i.e. RIE mode) instead of the upper electrode. This combination allows operation in the full range between PE and RIE modes and spans chemical to physical etching mechanisms. This flexibility along with the reliability of the Vision platform is attractive to both academic and industrial facilities.


  • Power supply switch for either PE or RIE modes
  • Up to 10 gas channels
  • Close couple turbo pump for high conductance
  • 305mm substrate platen
  • CE/UL compliant
  • DeviceNet (digital) field bus for faster, more accurate, and trouble free operation
  • Open load for easy access
  • Best-of-breed OEM components (standard “off the shell”) for fast parts availability
  • Digital MFCs (metal sealed, isolated)
  • Compact footprint (<0.6 m2)


  • User friendly Digital communication using DeviceNet
  • Data logging and recipe management through open SQL Server environment
  • Integrated endpoint control
  • Alarm history, multiple user access levels, on-the-fly recipe control
  • Real-time process data display
  • Easy and safe override maintenance screens


  • Extensive etch process library that includes
    • Dielectrics (fluorine based, e.g. SiNx, SiO2, a-Si, SiOxNy, Ta2O5)
    • Metals (fluorine based)
    • Polymers (e.g. polyimide, BCB, photoresist)
    • Compound Semiconductors (fluorine based, e.g. SiC,, H2/CH4 e.g. InP)
  • Surface treatment (e.g. O2 surface modification of patterned sapphire)
  • Descum




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